Improved parametric analysis of cylindrical surrounding double-gate (CSDG) MOSFET.

Abstract

Transistors are major components in designing and fabricating high-speed switching devices and micro-electronics. The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is popular and highly efficient for designing switches. It has wide applications in microelectronics, nanotechnology and Very Large-Scale Integration (VLSI) design where millions of MOSFETs are fabricated and embedded into a single chip. In these applications, heat becomes a major concern and requires to be addressed. The Cylindrical Surrounding Double-Gate (CSDG) MOSFET was introduced to overcome this challenge. The device has two scaled channel paths in a cylindrical two-gate structure, which have excellent control on the electrostatic activities that take place along the channel. This help to reduce corner effect and short channel effect and in turn produce higher drain current. This research work explores these advantages to propose a novel structure for an improved CSDG MOSFET. Firstly, the physical dimensions and structural layout of the improved CDSG MOSFET are highlighted and explained. After that, a parametric analysis of the CDSG MOSFET design has been done. This includes and supported with mathematical analysis and derivation of its operational parameters, namely surface potential, drain current, threshold voltage, transconductance, carrier mobility and capacitive characteristics etc. Thirdly, the thermal effects of this proposed device is analysed at different temperature. Also, the performance of the CDSG MOSFET is analyzed and compared to other existing MOSFET structures. The results from this analysis show that the improved CDSG MOSFET outperforms other existing MOSFETs. In fact, its power consumption is shown to be lower than those of other compared MOSFETs. A practical application of this device as an amplifier also yields plausible performance in terms of amplification gain and efficiency over a wide range of temperatures.